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First, compensation of the double parallel crystal monochromator was solved by adjusting the voltage (positive or negative) on PZT which can change the head angle of monochromator. In this way, the situation of monochromator has been improved and the monochromatic photon intensity was increased about 4-5 times than before. Experiments on measuring the nano-meter crystalline structure, doping silicon and high Tc superconductor material had been done.
Second, a new X-ray structural technique, DAFS (Diffraction Anomalous Fine Structure) was explored. X-ray diffraction measurements can provide information about the ordered, long-range atomic structure, while X-ray absorption fine- structure (XAFS) measurements provide local structure information. The DAFS technique we mentioned is precise energy-dependent X-ray diffraction anomalous fine structure measurements, combining all of the capabilities of both DAFS and XAFS technique. DAFS can provide information of the sturcture of crystalline material, superlattice of multi- phase system. With the experimental apparatus rearranged and the software for data acquisition recompiled, we obtained the DAFS patterns and XAFS curves of Gd_{2}O_{3} for the first time in this country.
Thrid, while X-rays Laue diffraction experiments have been done using the focal beamline 4B9A, when energy range of X-ray was within 3.5keV to 12keV, the ideal Laue diffraction patterns of Si(001) sample were obained with photo-emulsion and image plate, opening up a new way for measuring the molecular structure.
Wang Dewu ---------------------------------------------------------------------
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Febrary 1995 BEPC News